Coxeter complexes and graph-associahedra

Given a graph Γ, we construct a simple, convex polytope, dubbed graph-associahedra, whose face poset is based on the connected subgraphs of Γ. This provides a natural generalization of the Stasheff associahedron and the Bott-Taubes cyclohedron. Moreover, we show that for any simplicial Coxeter system, the minimal blow-ups of its associated Coxeter complex has a tiling by graph-associahedra. The geometric and combinatorial properties of the complex as well as of the polyhedra are given. These spaces are natural generalizations of the Deligne-Knudsen-Mumford compactification of the real moduli space of curves.     

On extremally disconnected topological groups

We introduce the notion of a partially selective ultrafilter and prove that (a) if G is an extremally disconnected topological group and p is a converging nonprincipal ultrafilter on G containing a countable discrete subset, then p is partially selective, and (b) the existence of a nonprincipal partially selective ultrafilter on a countable set implies the existence of a P-point in ω^∗. Thus it is consistent with ZFC that there is no extremally disconnected topological group containing a countable discrete nonclosed subset.     

理想气体在热力学中的作用

指出热力学理论是普遍的,不依赖于理想气体.理想气体为热力学理论提供了一个简单的实例,为测量热力学温度提供了一种简单的温度计.     

非对称量子阱中非线性光学吸收系数的计算

非对称量子阱中的非线性光学效应因其潜在的实用价值而引起人们的广泛关注,而量子阱内带间的光学吸收问题对研究远红外光学探测器件具有重要的理论指导意义.以Pschl-Teller势阱为例研究了影响非对称量子阱中的非线性光学吸收系数的因素.考虑到带间的电子弛豫,用量子力学中的密度矩阵算符理论导出了Pschl-Teller势阱中的线性与三阶非线性光学吸收系数的表达式.因该势阱中有两个可调参数,通过调节系统的参数,发现该系统的非线性光学吸收系数呈规律性的变化.以典型的GaAs/AlGaAs非对称量子阱为例作了数值计算,通过调节系统的参数,数值计算结果表明,入射光强以及系统的非对称性对量子阱的非线性光学吸收系数有较大的影响,从而为实验上研究非对称量子阱的非线性光学效应提供了必要的理论依据.     

小尺寸铕(Ⅲ)配合物荧光纳米颗粒的制备

利用再沉淀法分别制备出了小尺寸(~10nm)纯相和杂相的Eu³⁺配合物荧光纳米颗粒。所制备的纯相的荧光纳米颗粒在水溶液中容易聚集,并且荧光猝灭严重。相比较而言,掺有适量疏水性硅烷的杂相纳米颗粒则具有较强的荧光、均匀的尺寸和良好的分散性。硅烷在碱性环境下(pH=9)迅速地水解,而后在纳米微粒的表面形成二氧化硅薄层。亲水的二氧化硅薄层消除了Eu³⁺配合物纳米颗粒间的疏水相互作用,进而防止了纳米颗粒的聚集,从而导致了杂相荧光纳米颗粒发光性能的提高。     

锥形透镜光纤聚焦特性研究

锥形透镜光纤(TLF)是实现光纤与平面光波光路(PLC)芯片高效耦合的核心元件。了解和掌握其聚焦特性是指导平面光波光路尾纤封装技术的关键。给出了表征锥形透镜光纤聚焦特性的两个参量出射光斑直径和远场发散角的理论分析模型,其误差小于1.14%;采用光束传播法数值模拟了锥形透镜光纤中的光波传输和模斑的演化,确定了锥形透镜光纤端面出射光斑的大小;优化锥形透镜光纤结构参量为:拉锥长度300μm,锥角0.733°,透镜曲率半径13.485μm;建立了基于数字摄像机的锥形透镜光纤出射光场测试系统,提出了物理光学反向推演法,计算出锥形透镜光纤聚焦光斑尺寸和远场发散角。理论与实验结果有着良好的一致:对于相同结构参量的锥形透镜光纤,实验反推法得到的出射光斑尺寸与理论值相比误差为3.15%,远场发散角误差为3.67%。     

A study of structural, compositional and optical properties of spray-deposited non-stoichiometric (Zn,Fe)S thin films

Non-stoichiometric ternary chalcogenides (Zn,Fe)S were prepared in the film form by pyrolytic spray deposition technique, using air/nitrogen as the carrier gas. The precursor solution comprised of ZnCl₂, FeCl₂ and thiourea. The depositions were carried out under optimum conditions of experimental parameters viz. carrier gas (air/nitrogen) flow rate, concentration of precursor constituents, nozzle substrate distance and temperature of quartz substrate. The deposited thin films were later sintered in argon at 1073 K for 120 min.The structural, compositional and optical properties of the sintered thin films were studied. X-ray diffraction studies of the thin films indicated the presence of (Zn,Fe)S solid solution with prominent cubic sphalerite phase while surface morphology as determined by scanning electron microscopy (SEM) revealed a granular structure.The chemical composition of the resulting thin films as analyzed by energy dispersive X-ray analysis (EDAX) reflected the composition of the precursor solutions from which the depositions were carried out with Fe at% values ranging from 0.4 up to 33.SEM micrographs of thin films reveal that the grain sizes of the thin films prepared using air as carrier gas and N₂ as carrier gas are in the vicinity of 300 and 150 nm, respectively.The diffuse transmittance measurements for thin films, as a function of wavelength reveal the dependence of direct optical band gap on Fe content and type of phase.     

Electrical properties and Schottky diodes using N-N′diphenyl-1-4phenylenediamine

Thin films of, N-N′diphenyl 1-4phenylene-diamineane are prepared using vacuum sublimation technique. The electrical conductivity from room temperature down to 127 K is studied. It is found that the conduction of charge carriers obeys T^−1/2 dependence on temperature. The average hopping distance, hopping energy, density of states and their variation due to post-deposition heat treatment are studied. Schottky diodes are fabricated with gold as ohmic contact and aluminium as Schottky contact. From the observed current voltage characteristics the saturation current density, diode ideality factor and the barrier height are determined. Their variation with air annealing is also investigated.     

A solution of the DGLAP equation for gluon at low x

We obtain a solution of the DGLAP equation for the gluon at low x first by expanding the gluon in a Taylor series and then using the method of characteristics. We test its validity by comparing it with that of Glück, Reya and Vogt. The convergence criteria of the approximation used are also discussed. We also calculate εF ₂(x,Q)²/ε In Q ² using its approximate relations with the gluon distribution at low x. The predictions are then compared with the HERA data.     

超临界流体触媒作用下石墨-金刚石转变

 研究了超临界流体CO₂在石墨-金刚石转变中的触媒作用。实验中，采用Ag₂O作为流体触媒的先驱材料，在7.7 GPa压力下，Ag₂O在1 200 ℃分解成Ag和O₂，O₂与石墨套管在高温高压下反应形成CO₂超临界流体。研究结果表明，在7.7 GPa和1 500 ℃以上温度条件下，石墨在CO₂流体触媒的作用下可转变为金刚石晶体，在1 500～1 700 ℃温度范围内合成出的金刚石具有完好的八面体形貌，与天然金刚石的生长特征非常相似。